CMOS source degenerated differential active inductor

Abstract

A new CMOS source degenerated differential active inductor is proposed. The proposed differential active inductor required only six transistors or more for proper operation. It is very compact compared to a conventional differential active inductor that was design using two differential transconductors and which requires at least ten transistors. The proposed active inductor was fabricated using Silterra 0.18 µm CMOS process for demonstration. Measurement results show that the proposed active inductor has a wide tuning range with a maximum resonance frequency of 7.85 GHz.