Abstract
The current ATLAS Inner Detector will be replaced with a fully silicon based detector called Inner Tracker (ITk) before the start of the High Luminosity-LHC project (HL-LHC) in 2026. To cope with the harsh environment expected at the HL-LHC, new approaches are being developed for pixel detectors based on CMOS technology. Such detectors can provide charge collection, analog amplification and digital processing in the same silicon wafer. The radiation hardness is improved thanks to multiple nested wells which give the embedded CMOS electronics sufficient shielding. The goal of this programme is to demonstrate that depleted CMOS pixels are suitable for high rate, fast timing and high radiation operation at the LHC . A number of alternative solutions have been explored and characterised. In this document, test results of the sensors fabricated in different CMOS processes are reported.
Highlights
: Radiation-hard detectors; Particle tracking detectors (Solid-state detectors); Solid state detectors usually implemented in the a deep n-wells to be decoupled from the charge collection region in the p-substrate
Small fill factor In this design the electronics are placed outside the charge collection wells
The results presented are focused on the STime Pixel on the HV-CMOS sensor with a pixel size of 33 × 125 μm2
Summary
To cope with the harsh environment expected at the HL-LHC, new approaches are being developed for pixel detectors based on CMOS technology Such detectors can provide charge collection, analog and digital amplification in the same silicon wafer. This design is been investigated using the TowerJazz 180 nm CMOS process (manufactured by Tower Semiconductor). Radiation hardness is achieved due to the electrode size and the depletion thickness This design is based on AMS2 and LFoundry manufacturing technologies. Results for a sensor prototype produced using the HV-CMOS technology by the AMS foundry are presented. Three deep N-wells are present in each pixel: a central N-well of 50 × 110 μm containing a deep P-well and two external wells of 50 × 70 μm
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