Abstract
A new integrated inductor structure suitable for multiband application is proposed and used to implement a CMOS multiband low-noise amplifier. Its occupied silicon area can be decreased by more than 40% while its performance is almost the same as those of LNAs using the conventional inductor structure. It is fabricated in a 0.13 µm CMOS process and its measured results show gains of 16.8, 15.8 and 15.5 dB, with NFs of 1.4, 1.8 and 1.9 dB, and IIP3 of 4, 0 and −2 dBm for the 850, 1800/1900 and 2100 MHz bands, respectively.
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