Abstract
Recent results on MMIC based on a 90-nm CMOS process are presented. Linear and nonlinear models were developed for the transistors based on S-parameters, noise parameters, and power spectrum measurements. Based on EM-simulations, models for multilayer capacitances, MIM-capacitances, various transmission lines etc were also developed. Amplifiers, frequency mixers, and frequency multipliers were then designed, fabricated and characterized. Amplifiers with a gain of 6 and 3.5 dB per stage at 20 and 40 GHz respectively, were demonstrated as well as frequency multipliers from 20 to 40 GHz with 15.8 dB conversion loss, and 30 to 60 GHz multipliers with 15.3 dB conversion loss. Resistive mixers at 20, 40, and 60 GHz were also demonstrated with promising results.
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