Abstract
We demonstrate low-operational-current W/Co20Fe60B20/MgO spin Hall nano-oscillators (SHNOs) on highly resistive silicon (HiR-Si) substrates. Thanks to a record high spin Hall angle of the β-phase W (θSH = −0.53), a very low threshold current density of 3.3 × 107 A/cm2 can be achieved. Together with their very wide frequency tunability (7–28 GHz), promoted by a moderate perpendicular magnetic anisotropy, HiR-Si/W/CoFeB based SHNOs are potential candidates for wide-band microwave signal generation. Their CMOS compatibility offers a promising route towards the integration of spintronic microwave devices with other on-chip semiconductor microwave components.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
