Abstract
We report the design, fabrication and characterization of CMOS compatible metal-insulator-metal (MIM) plasmonic resonators made of tungsten and silicon nitride for the mid-infrared range. These structures give rise to spectrally selective emission/absorption, which is of particular interest in the field of non-dispersive infrared (NDIR) gas spectroscopy. In this paper, we demonstrate large scale fabrication on 200 mm silicon wafer of such devices, and show some of their main characteristics, such as tunability, multi-spectral sources, polarization-independance and consistency between reflectivity and emissivity measurements.
Highlights
Among the various infrared gas sensors currently proposed, many offer high sensitivity, selectivity and long lifetime compared with alternative sensing methods such as electrochemical or catalytic detection [1]
Fabrication and characterization of CMOS compatible metalinsulator-metal (MIM) plasmonic resonators made of tungsten and silicon nitride for the midinfrared range
These structures give rise to spectrally selective emission/absorption, which is of particular interest in the field of non-dispersive infrared (NDIR) gas spectroscopy
Summary
Among the various infrared gas sensors currently proposed, many offer high sensitivity, selectivity and long lifetime compared with alternative sensing methods such as electrochemical or catalytic detection [1]. The offer for adjustable narrow band emitters is undoubtedly dominated by Metal-Insulator-Metal (MIM) structures They exhibit metal-like low emissivity on all the spectrum, apart from a peak at their resonant frequency [6,7,8,9,10]. We report here on the feasibility of such sources in a CMOS foundry, on 200 mm silicon wafers, using CMOS compatible materials and processes This paves the way to cheap and efficient infrared thermal sources, which could open new markets to NDIR gas sensors, typically in frugal appliances requesting decade-long battery-based operation for indoor air quality control
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