Abstract
A novel electrostatically formed nano-wire (EFN) transistor for temperature sensing is presented. The device is a silicon-on-insulator multigate field-effect transistor, in which a nanowire-shaped conducting channel vertical position and area are controlled by the bias applied to the back gate, and two junction-side gates. Our measurements depict temperature sensitivity of 7.7%/K for EFN transistors which is among the best reported values for semiconductor temperature sensing devices TMOS and FET’s. Optimal operational voltage biases and currents for the EFN transistor regimes are evaluated from measurements and analyzed using three dimensional (3D) electrostatic device simulations and developed analytical model.
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