CMOS circuits for peripheral circuit integrated poly-Si TFT LCD fabricated at low temperature below 600 degrees C

Abstract

CMOS shift registers, buffers, and gray-scale representation circuits for integrated peripheral drive circuits of poly-Si TFT LCDs were fabricated at temperatures below 600 degrees C on a glass substrate. The maximum operation frequency of the CMOS shift register was 1.25 MHz. The total power consumption of the 10 stage CMOS shift registers at a clock frequency of 46.8 kHz and a power supply voltage of 20 V was 10 mu W, which is three orders of magnitude smaller than that of 10-stage nMOS shift registers. The rise and fall times of the CMOS buffers were proportional to the inverse of the channel width, and the write time of the gray-scale representation circuits was proportional to the line memory capacitance. >