Abstract
The effects of alloy clustering in AlxGa1−xAs-GaAs quantum-well heterostructures (QWH’s) grown by molecular-beam epitaxy (MBE) are investigated. Both low- and high-level photoluminescence data on three of the best MBE QWH lasers are presented. These data indicate that while clustering in AlxGa1−xAs can depend on crystal growth conditions (temperature, stoichiometry, surface chemistry, contamination, etc.), it is to an appreciable extent intrinsic to the alloy. Clustering in AlxGa1−xAs can result from the random distribution of Al and Ga atoms regardless of the method of crystal growth. In addition, this work demonstrates cw 300-K photopumped laser operation of MBE QWH’s, which would not be possible if the distributed and heterointerface defect densities (of unknown amount) were very high.
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