Abstract
The influence of deposition energy on the electron transport character in amorphous carbon films containing silicon and oxygen was studied. It is shown that the dominant mechanism of the conductivity over the entire range of deposition energies at the applied electric fields up to 5·105 V/cm is a bandtail hopping of the charge carriers along the transport energy level. The role of sp2 clustering enhancement at high deposition energies in the electron transport modification is considered.
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