Abstract
A graphene-charge carrier confinement induced by high-frequency photons and a subsequent clustering of artificial atoms in graphene plane have been studied using electrophysical and Raman-spectroscopy methods. To fabricate the graphene n-p-n junctions, commensurable superlattice structures consisting of multi-walled carbon nanotubes (MWCNTs) have been formed utilizing a Langmuir-Blodgett technique. It has been shown that the p-n graphene junctions are sensitive to graphene lattice-deformation defects only. The levels of graphene defect do not host impurity electrons. One offers a mechanism of graphene monolayer self-repairing after a radiation damage. This mechanism is based on an existence of topologically protected Compton scatterers in graphene plane.
Highlights
Graphene, carbon nanotubes (CNT), and graphene-like materials can exhibit radiation resistance and are promising structural materials for nuclear applications, for example, new generation of photodetectors [1] and as a replacement for plastic beta-scintillators [2] due to the following features
Radiation resistivity of multiwalled CNTs (MWCNTs) is revealed as a possibility for carbon atoms to be displaced by gamma-rays in the vicinity of graphene plane only that a radiation structural rearrangement is restricted to chemical cross link of the nearest carbon nanotubes by formation of chemical bonds between neighbor C atoms from graphene layers or between C atoms on the interface CNT–environment [7, 12]
In the paper we study the influence of weak flows of gamma- and beta-ray particles from radiation source of 137Cs on electrophysical properties of ultra-thin Langmuir–Blodgett (LB) films which have been fabricated from MWCNTs decorated by organometallic compound
Summary
Carbon nanotubes (CNT), and graphene-like materials can exhibit radiation resistance and are promising structural materials for nuclear applications, for example, new generation of photodetectors [1] and as a replacement for plastic beta-scintillators [2] due to the following features. Band structure of graphene materials is gapless, their bands are touched, and chiral charge carriers are massless. The atoms, which are knocked out of the graphene plane or ultrathin crystal under action of high-energy (1 MeV–1 GeV) ions [5,6,7],. Chiral massless charge carriers in graphene form electron-hole pairs. The value of hole/electron density is high enough to provide trapping of bombarding negatively/positively electrically charged particle. Because of the gapless structure, the interaction between graphene and electro-magnetic radiation presents itself an elastic scattering of gamma-quanta on free charge carriers. In the paper we study the influence of weak flows of gamma- and beta-ray particles from radiation source of 137Cs on electrophysical properties of ultra-thin Langmuir–Blodgett (LB) films which have been fabricated from MWCNTs decorated by organometallic compound. The junctions induced by the hight-frequency electromagnetic radiation will be investigated by Raman spectroscopy methods
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