Clustering and phonon effects in AlxGa1− xAs GaAs quantum-well heterostructure lasers grown by molecular beam epitaxy

Abstract

Photoluminescence data, at low and high excitation levels (pulsed and c.w., 300 and 77 K), are presented on Al x Ga 1− x As GaAs quantum-well heterostructures (QWH's) grown by molecular beam epitaxy (MBE). Continuous 300 K photopumped laser operation is demonstrated. Evidence (300 and 77 K) for phonon-assisted recombination (phonon sidebands) and for alloy clustering (confined-particle tail states) is presented and shown to be in agreement with earlier work on similar QWH's grown by metalorganic chemical vapor deposition (MO-CVD).