Cluster Formation on Semiconductor surface and Statistics

Abstract

In the present study semiconductor surfaces are grown by Monte Carlo technique where particle flux coming to the surface is stopped after the particle coverage of the surface has reached a predetermined value and thereafter the simulation is continued untill the surface reached its equilibrium shape. Then the statistical distribution of monolayer clusters is examined. The study is carried out for different growth temperatures, different particle flux values to the surface and different coverage values and their effect on the statistics of clusters is investigated. Furthermore the relation between the energy parameters of the problem and cluster formation and their statistics are studied. In this study 60, 80, 100 and 130 K temperature values are used. The simulation area is chosen as a 200x200 square grid. When the coverage reached a value of 5%, %10 and 15%, the growth is stopped and the surface is allowed to equilibrate. When the statistical distribution of clusters is investigated, it is observed that the distribution is affected by temperature, particle flux to the surface and the coverage of the surface.