Abstract
Pre-amorphized silicon wafers are implanted with 30 keV C 60 + and 0.5 keV C + ions at room temperature with fluences about 2 × 10 15 atoms/cm 2. The depth profiles of implanted carbon are measured using high-resolution Rutherford backscattering spectroscopy. The observed average depth of C for the C 60 + implantation is 6.1 nm while that for the C + implantation is 4.0 nm, showing a large cluster effect on the projected range.
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