Abstract
ZnTe epitaxial film with thickness of 200цm was grown on the GaAs substrate by close-space sublimation (CSS). The surface topography of ZnTe film was analyzed by SEM, and the evolution of growth pit was observed, which revealed the mechanism of epitaxial growth. The structure was analyzed by X-ray radiation diffraction (XRD) 9–29 scan and rotary Ф-scan, and the results suggested that the ZnTe thick film is epitaxial film. The crystalline quality of ZnTe thick film was characterized by X-ray rocking curve and Raman spectrum, and the results suggested that ZnTe epitaxial film obtained by CSS could be as a replacement of ZnTe single crystal, especially for thinner and larger requirement.
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