Abstract
Bismuth telluride thin films have been grown by close space vapor transport (CSVT) technique as a function of substrate temperature ( T sub). Both N- and P-type samples can be obtained by this method which is a relatively simple procedure, which makes the method interesting for technological applications. The samples were deposited onto amorphous glass and polycrystalline CdTe film substrates in the substrate temperature range 300–425 °C, with a fixed gradient between source and substrate of 300 °C. The influence of the type of substrate and substrate temperature in the CSVT chamber on the physical properties of the films is presented and discussed.
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