Close Observation of the Geometrical Features of an Ultranarrow Silicon Nanowire Device

Abstract

We have investigated the geometrical properties of a silicon (Si) nanowire device in relation to its electrical characteristics. In the fabricated Si nanodevice with an ultranarrow Si nanowire of less than 10 nm width and of 17.5 nm height, we have observed Coulomb blockade oscillation. The close examination of both the plane-view and cross-sectional transmission electron microscopy (TEM) images of the same ultranarrow Si nanowire has been carried out successfully. No physical discontinuity was found, even in the Si nanowire which shows the Coulomb blockade effect. The obtained results provide useful information for future fabrication of ultrasmall Si devices.