Abstract
Using ab initio full-potential linearized plane wave calculations, we studied the cleavage characteristics for three basal planes in Ti 3 SiC 2 and found that the habit cleavage should be between the Ti and Si hexagonal layers. The estimations of fracture properties under tensile stress showed a significant stretching of the Ti–Si bonds before failure that may explain the damage tolerance of Ti 3 SiC 2 .
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