Abstract
Resist stripping and cleaning process solutions for porous methylsilsesquioxane (p-MSQ) low-k dielectric device applications are presented. A downstream plasma photoresist removal process with a gas mixture of helium and hydrogen is shown to be effective without introducing any significant damage to the porous low-k dielectric material. Results are reported on the plasma process, characterization of the effects of the plasma with the low-k material and on the wet-clean enabling features of this resist removal process. A comparison of the plasma process to a low-temperature, low-pressure oxygen plasma process for photoresist removal shows that the process is unreactive with the low-k material, while the process interacts with and chemically changes the low-k material. The plasma treated low-k material is incompatible with standard wet cleans. © 2003 The Electrochemical Society. All rights reserved.
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