Abstract
The formation of reliable ohmic contacts to silicon is considered. Silicon surface cleaning, contact window doping, and molybdenum application by cathode sputtering in the BF3atmosphere are carried out in a single vacuum cycle. A model of semiconductor–plasma and dielectric–plasma contacts under stationary discharge conditions is discussed. It is shown that the rates of processes with the participation of charged particles on p-Si and n-Si surfaces substantially differ. The resistivity of Mo-n + Si and Mo-p + Si contacts is the least when the molybdenum films are applied by sputtering in the Ar + (10–15) vol % BF3atmosphere.
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