Clean quantum point contacts in an InAs quantum well grown on a lattice-mismatched InP substrate

Abstract

Indium arsenide (InAs) has a small effective mass, strong spin-orbit coupling, and surface Fermi level pinning. Together with improvements in the epitaxial growth of quantum well heterostructures, InAs presents an enticing platform for studying mesoscopic physics. Here, the authors investigate quantized conductance and magnetotransport through quantum point contacts (QPCs) fabricated on a deep InAs two-dimensional electron gas. These QPCs can serve as a robust building block for further experiments in quantum circuits and electron quantum optics.