Clean and doped surface electronic structure in angle-resolved and resonant photoemission study

Abstract

The paper presents the experimental results of the electronic band structure study of the semiconductor crystal clean surface and this surface doped by transition metal or rare earth metal atoms. For clean surfaces of the CdTe crystal the two-dimensional electronic band structure E( k ) dependence was determined for surface states located in the valence band energy region. The doping of the clean surface of CdTe was performed by the controlled, sequential deposition of metal atoms (Fe, Gd or Yb) on the surface. After each deposition the synchrotron radiation was used to measure the resonant photoemission spectra (energy distribution curve – EDC, constant initial states – CIS and constant finale states – CFS). The results of the study showed that in the first stages of the metal atoms' deposition in the range of thickness equal to about 0.5 ML the effect of the crystal clean surface doping occurs. For bigger metal layer deposition the metallic islands electronic structure gave the contribution to the measured spectra. Heating of the sample surface covered by metal atoms leads to the diffusion of the atoms into the sample and results in an increase of the crystal doping and decrease of the metallic islands contribution to the measured spectra.