Classification of stacking faults and dislocations observed in nonpolar a-plane GaN epilayers using transmission electron microscopy

Abstract

In this study, we presented comparative discrimination methods to identify various line and planar defects observed in nonpolar a-GaN epilayers on r-sapphire substrates. Unlike the case of conventional c-GaN, which is dominated by perfect threading dislocations, systematic identification of undistinguishable defects using transmission electron microscopy (TEM) is necessary to suppress the propagation of defects in nonpolar GaN epilayers. Cross-sectional TEM images near the [0001] zone axis revealed that perfect mixed and pure screw type dislocations are visible, while pure edgeand basal stacking faults (BSFs) are not discernible. In tilted cross-sectional TEM images along the [1 2¯ 1 0] zone axis, the dominant defects were BSFs and partial dislocations for the g→=1¯ 0 1 0 and 0002 two-beam images, respectively. From plan-view TEM images taken along the [1 1 2¯ 0] axis, it was found that the dominant partial and perfect dislocations were Frank–Shockley and mixed dislocations, respectively. Prismatic stacking faults were observed as inclined line contrast near the [0001] zone axis and were visible as band contrast in the two-beam images along the [1 2¯ 1 0] and [1 1 2¯ 0] zone axes.