Classical and Dynamic Analysis of Gas Phase Reactivity: Influence of Carbon Precursor in the CVD of SiC

Abstract

The intrinsic low dimensional manifold method (ILDM), which is a reduction method of large gaseous chemical systems, is applied to the gas-phase chemistry used to deposit 4H or 6H silicon carbide (SiC). The 1-dimensional (1-D) manifold corresponding to the relaxation of all the fast reaction modes of the complex gaseous chemical system is calculated and represented according to different projections in the state space. The ILDM method is also used to compare trajectories corresponding to various initial gas-phase compositions. These initial gas-phase mixtures, which include different carbon precursors, all converge towards the same thermodynamic equilibrium. Long before thermodynamic equilibrium is reached, the trajectories are attracted by the 1-D manifold. © 2004 The Electrochemical Society. All rights reserved.