Abstract

This paper presents the digital transmitter architecture using Class S power amplifier (PA) based on GaN HEMT transistor. In order to overcome the efficiency degradation problem in amplification of envelope varying signal, delta-sigma modulation scheme is used along with Class S power amplifier. The proposed Class S architecture is based on current switching Class D power amplifier which is designed and fabricated at 2 GHz. The result shows that the drain efficiency of 71.5% and gain of 11.6 dB is obtained at peak output power. LTE signal of 5 MHz band is used as an input to delta-sigma modulator for validating the functionality of Class S PA design.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.