Abstract
This research work designs a power amplifier with the use of Silicon-based Double-Gate (DG) MOSFET. It is a novel device used to amplify the input signal of an audio signal, etc. This research paper provides information on the problem identification in the existing models and its design objectives with its design constraints. It also reduces crossover distortion due to DG MOSFET instead of BJTs and MOSFETs in the class-B power amplifier. This is a low-power device for the mA range using SiO2 as a dielectric material.
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