Abstract
AbstractHigh microwave power (1000W) Electron Cyclotron Resonance (ECR) Cl2/Ar plasma produce etch rates for In0.5Ga0.5P, Al0.5In0.5P and Al0.5Ga0.5P of ˜1um/min. at low pressure (1.5mTorr), moderate rf power levels (150W) and room temperature. Addition of Cl2 into Ar makes much smoother etched surface morphology as well as increasing the etch rate. All parameters, including microwave power, chamber pressure and rf power increase the etch rate of these alloys. Especially, there is at least a minimum rf power in order to get much higher etch rate with increasing microwave power. AlGaP in Cl2/Ar discharges has lower etch rates than InGaP or AlInP, which is similar to the results based on CH4/H2/Ar plasma chemistries. The Cl2/Ar chemistry enables smooth, high-rate etching without the need for polymer addition and thus simplifies the processing.
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