Abstract
In this work, the etch characteristics of thin films were investigated using inductively coupled plasma (ICP) of gas mixtures. To analyze the plasma characteristics, a quadrupole mass spectrometer (QMS), an optical emission spectroscopy (OES), and a Langmuir probe measuring system were used. The surface reaction of the thin films was investigated using X-ray photoelectron spectroscopy (XPS). It was found that an increase in Ar fraction in the plasma at fixed gas pressure, input power, and bias power resulted in increasing etch rate which reached a maximum value of 87.6 nm/min at 70-75 % Ar. It was confirmed that the etch rate of the films was mainly controlled by the ion flux. On the basis of measuring results, we will discuss possible etching mechanism of film in the plasma.
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