Abstract
Using a ZnCl2 cell as doping source we have grown epitaxial layers of Cl‐doped ZnSe layer onto GaAs(100) substrates by molecular beam epitaxy. The carrier concentration was controlled by the ZnCl2 source temperature. The maximum carrier concentration was 1.1×1019 cm−3, with a resistivity of 2.7×10−3 ohm‐cm. Higher doses of Cl atoms tend to decrease free carrier concentration, and introduce additional lattice defects. A deep level at Ec∼0.74 eV presents a clear dependence with carrier concentration.
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