Abstract
Antimony selenide (Sb2Se3) has been considered potential candidate material for the high-performance photovoltaic and photo-detecting application due to its significant optical absorption coefficient (∼105), suitable direct band gap (1.0–1.2 eV), low toxicity, and natural abundance in the crust. To overcome its low electrical conductivity and low-charge carrier density deficiencies, we propose a one-step melting quenching method strategy to prepare Cl− doped Sb2Se3 semiconductors. The photocurrent density of Sb2(Se0.9983Cl0.0017)3 crystal was greatly improved, with fast response speed and photo-response stability. The Sb2(Se0.9983Cl0.0017)3 films were then fabricated with rapid thermal evaporation. The beneficial effect of Sb2(Se0.9983Cl0.0017)3 films on photoelectric performance enhancement is confirmed by researching aspects such as heat treatment-dependent morphology, growth orientation and photoconductivity.
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