Abstract
Strong enhancement of electroluminescence intensity and high degree of its circular polarization (up to 50% at low temperature T=1.8 K and magnetic field B=9 T) are demonstrated in Schottky diodes with near contact InGaAs/GaAs quantum well and Mn δ-layer. High values of polarization degree are suggested to be due to effective exchange interaction of holes with magnetic moments of Mn atoms in the nearby δ-layer that is confirmed by peculiarities in the temperature dependence of resistance, typical to ferromagnetic semiconductors.
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