Abstract
We propose an orientation-dependent polarization manipulation by Cherenkov radiation (CR) in a silicon-on-insulator (SOI) waveguide with a metasurface. By putting an electron bunch passing near the SOI waveguide, CR excites the fundamental TE-like mode with ultra-high mode purity. The spin state of the decoupled light is determined by the direction of the electron motion, and the maximum magnitude of the normalized Stokes polarization parameter S 3 approaches ± 1 , corresponding to the right and left circularly polarized light. This Letter provides a new, to the best of our knowledge, way to achieve CR with spin angular momentum in an SOI waveguide and offers a platform to study the interaction between an electron and light with nanostructures on-chip.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
