Abstract
We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.
Highlights
The understanding of the physics governing the dynamics of spin-polarized carriers in semiconductor structures is a fundamental issue for the development of new spintronic devices
One possible approach to achieve this goal is based on resonant tunneling diodes (RTDs) because the spin character of the carriers in the structure could be voltage controlled [11,12,13,14,15]
We have investigated the polarizationresolved photoluminescence (PL) from different regions in a non-magnetic asymmetric n-type RTD with a GaAs quantum well (QW) and AlAs and AlGaAs barriers
Summary
The understanding of the physics governing the dynamics of spin-polarized carriers in semiconductor structures is a fundamental issue for the development of new spintronic devices. The spin-dependent tunneling of carriers was studied by analyzing the current-voltage characteristics (I(V)) and the right (s+) and left (s-) circular polarized PL from the contact layers and from the QW under magnetic fields up to 19 T.
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