Abstract
Over the last few years high power semi-conductor devices with intrinsic turn-off capability have become available. These devices, called gate turn-off (GTO) thyristors, consist of several layers of silicon with appropriate dotations; they are able to turn off currents of 1000 Amperes at thousands of volts within microseconds. In circuits used in power electronics the usual resistive, inductive and capacitive circuit elements are combined with thyristors which may simply be considered as switches. This technology is still an active field of research, and it has many important applications such as AC/DC conversion (both ways), speed control of locomotives and electric cars, control of power stations and power networks, etc.
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