Abstract
Present study is motivated by interesting attainment obtained for copper indium gallium diselenide compound as a light absorbing material for thin-film solar cell. Formation of copper indium gallium diselenide nanostructures via solvothermal method using starting precursors of copper, indium, gallium salts, and selenium powder is represented. Preparation is done by varying x (0.1 and 0.3) in CuIn1−x Ga x Se2 compound at a constant temperature and using ethanolamine as a solvent. Characterization of nanostructures is done using powder X-ray diffraction, scanning electron microscopy, dynamic light scattering, Fourier transform infrared spectroscopy, and UV–Vis spectroscopy. It is found that grown chalcopyrite structure at different x, possess agglomeration in nanostructures. Results indicate that presence of 10 % gallium in copper indium gallium diselenide compound leads to the single-phase growth, prepare at the temperature of 190 °C for 19 h.
Highlights
Among the group I–III–VI2 semiconductor material, copper indium gallium selenide is reported the highest efficiency of 20 % as a solar cell device (Jackson et al.2011)
Present study is motivated by interesting attainment obtained for copper indium gallium diselenide compound as a light absorbing material for thin-film solar cell
Numerous processes have been reported by many investigators for the synthesis of copper indium gallium diselenide (CIGS) nanostructures like mechanochemical (Rehani et al 2013), colloidal route (Tang et al 2008; Kim et al 2005), green synthesis (Juhaiman et al 2010), precipitation (Panthani et al 2008), micro-wave synthesis (Bensebaa et al 2010), mechanical alloying (Vidhya et al 2011), etc
Summary
Among the group I–III–VI2 semiconductor material, copper indium gallium (di) selenide is reported the highest efficiency of 20 % as a solar cell device (Jackson et al.2011). Abstract Present study is motivated by interesting attainment obtained for copper indium gallium diselenide compound as a light absorbing material for thin-film solar cell. Results indicate that presence of 10 % gallium in copper indium gallium diselenide compound leads to the single-phase growth, prepare at the temperature of 190 °C for 19 h.
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