Abstract
New defect etching solutions for application on engineered silicon substrates are presented which are free of toxic hexavalent chromium. The "FS Cr-free SOI" was developed for revealing crystal defects in silicon-on-insulator (SOI) substrates and proved to be a highly suitable alternative to the Secco etching solution. Another defect etching solution ("thin SOI etch") especially developed for application on very thin SOI films is also characterized in detail. For strained silicon-on-insulator (sSOI) substrates a defect etching solution ("sSOI etch") is introduced which shows an enhanced sensitivity to such low strain fields produced by stacking faults, however, its correlation to the Secco etching solution has to be improved. Besides etching mechanisms and defect delineation processes will be discussed.
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