Abstract
Oxygen-ion implantation has been performed in chromium-doped GaAs substrates. Oxygen chromium profiles were measured by SIMS. Implanted oxygen profiles are observed for the first time. The chromium distribution, in annealed samples, shows an accumulation. This accumulation is shown to depend on the implanted ion and on the nature and concentration of the metallic impurity in the substrate. Thus one can no longer expect to analyze the contribution of any single impurity without taking into account other incorporated impurities.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
