Chromatic Change in Copper Oxide Layers Irradiated with Low Energy Ions

Takuya Kobayashi,Fumitaka Nishiyama,Katsumi Takahiro

doi:10.3390/qubs5010007

Takuya Kobayashi, Fumitaka Nishiyama + Show 1 more

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https://doi.org/10.3390/qubs5010007

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Abstract

The color of a thin copper oxide layer formed on a copper plate was transformed from reddish-brown into dark blue-purple by irradiation with 5 keV Ar+ ions to a fluence as low as 1 × 1015 Ar+ cm−2. In the unirradiated copper oxide layer, the copper valence state of Cu2+ and Cu+ and/or Cu0 was included as indicated by the presence of a shake-up satellite line in a photoemission spectrum. While for the irradiated one, the satellite line decreased in intensity, indicating that irradiation resulted in the reduction from Cu2+ to Cu+ and/or Cu0. Furthermore, nuclear reaction analysis using a 16O(d, p)17O reaction with 0.85 MeV deuterons revealed a significant loss of oxygen (5 × 1015 O atoms cm−2) in the irradiated layer. Thus, the chromatic change observed in the present work originated in the irradiation-induced reduction of a copper oxide.

Highlights

On ion beam experiments including materials analysis and modification with ion beams, a beam monitoring system is installed in the sample chamber to monitor the beam position and uniformity in the beam spot
The aforementioned materials are insulators and electric charging takes places on the fluorescent plate irradiated with ion beams, resulting in deflection of ion beams in the vicinity of the fluorescent plate if their acceleration voltage is comparable to the charged potential of a few tens kilovolts [8]
The minimum fluence to recognize the beam spot with naked eyes will be examined for further discussion of the sensitivity and applicability of the chromatic change for a beam viewer

Summary

Introduction

On ion beam experiments including materials analysis and modification with ion beams, a beam monitoring system is installed in the sample chamber to monitor the beam position and uniformity in the beam spot. The aforementioned materials are insulators and electric charging takes places on the fluorescent plate irradiated with ion beams, resulting in deflection of ion beams in the vicinity of the fluorescent plate if their acceleration voltage is comparable to the charged potential of a few tens kilovolts [8] This means that the fluorescent point would be different from the real position, and further the fluorescent point would not appear at all in the case of low energy ion beams with

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Conclusion