Abstract
This study is dedicated to the common problem of how to choose a suitable substrate for ion irradiation of two-dimensional materials in order to achieve specific roles of certain defect formation mechanisms. The estimations include Monte Carlo simulations for He, Ar, Xe, C, N and Si ions, performed in the incident ion energy range from 100 eV to 250 MeV. Cu, SiO2, SiC and Al2O3 substrates were analyzed. The considered substrate-related defect formation mechanisms are sputtering, recoil atoms reaching the interface with a non-zero energy, and generation of hot electrons in close proximity of the interface. Additionally, the implantation of sputtered substrate atoms into the 2D material lattice is analyzed. This work is useful both for fundamental studies of irradiation of two-dimensional materials and as a practical guide on choosing the conditions necessary to obtain certain parameters of irradiated materials.
Highlights
Ion irradiation of two-dimensional (2D) materials is a versatile and convenient tool for modifying the material structure through a controlled induction of lattice defects, cutting or atom implantation [1,2,3]
The substrate choice is known to play a significant role in the irradiation process [1,2,3,4,5,6,7]. It can increase the stability of a monolayer under irradiation, leading to reduction of a resultant defect yield [3]; on the other, it can participate in defect formation in the 2D material through energy transfer from sputtered substrate atoms moving through the monolayer [1,4]
Substrate sputtering can be on one hand effectively regarded as a secondary irradiation of the adsorbed two-dimensional material in accordance with a common practice [4]; on the other hand, the substrate recoils reaching the interface may be considered a source of energy transferred to the monolayer while remaining within the substrate [8,16]
Summary
Ion irradiation of two-dimensional (2D) materials is a versatile and convenient tool for modifying the material structure through a controlled induction of lattice defects, cutting or atom implantation [1,2,3] This method is useful for engineering of the optical, electric and catalytic properties of monolayers [1,2,3]. The substrate choice is known to play a significant (and sometimes crucial) role in the irradiation process [1,2,3,4,5,6,7] On one hand, it can increase the stability of a monolayer under irradiation, leading to reduction of a resultant defect yield [3]; on the other, it can participate in defect formation in the 2D material through energy transfer from sputtered substrate atoms moving through the monolayer [1,4].
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
