Abstract
In this work, the tetra-, octa- and hexadecachloro-substituted copper phthalocyanines CuPcClx (where x can equal 4, 8 or 16) were investigated by the methods of vibrational (IR and Raman) spectroscopy and X-ray diffraction. The assignment of the most intense bands, both in IR and Raman spectra, was carried out on the basis of DFT calculations. The structure of a CuPcCl4 single crystal grown by sublimation in vacuum was refined for the first time. The effect of chloro-substitution on the structure of CuPcClx thin films deposited in a vacuum onto a glass substrate at 50 and 200 °C was studied. It was shown that CuPcCl4 formed polycrystalline films with the preferential orientation of the (100) crystallographic plane of crystallites parallel to the substrate surface when deposited on a substrate at 50 °C. Introduction of more Cl-substituents into the phthalocyanine macrocycle leads to the formation of amorphous films on the substrates at 50 °C. At the elevated substrate temperature, the growth of polycrystalline disordered films was observed for all three copper phthalocyanines.
Highlights
Metal phthalocyanines (MPcs) attract the wide attention of researcher in various areas of materials science, chemistry and electronics
The literature analysis shows that a number of works are devoted to the investigation of fluoro-substituted metal phthalocyanines, as active layers of organic field-effect transistors (OFETs) [3,4,5]
A single crystal of CuPcCl4 in the form of a small needle (0.15 mm × 0.03 mm × 0.03 mm) of dark purple color was selected from a polycrystalline crust formed on the side of a glass ampule during the gradient vacuum sublimation of the product obtained after the synthesis
Summary
Metal phthalocyanines (MPcs) attract the wide attention of researcher in various areas of materials science, chemistry and electronics. For their application in different electronic devices, they should be prepared as thin layers with an reproducible structure and ordering. Halogen-substituted phthalocyanines were synthesized a long time ago [1], the interest in their thin films has increased again in recent years. This is primarily due to their comparatively high charge carriers’ mobility and n-type semiconducting behavior [2].
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