Abstract

In this study, we examined the effects of doping chlorine (Cl) into crystalline selenium (c-Se) on diminishing the tellurium-diffusion-induced shallow acceptor states associated with the dangling bonds that appear at the ends of Se chains by theoretical analysis with the first-principles calculations. In this model, the negatively charged dangling bonds can be neutralized by inserting monovalent Cl atoms. Furthermore, the defect termination by doping Cl into fabricated Se thin films was experimentally demonstrated. Low-temperature cathodoluminescence measurements were implemented to show that acceptor-related emissions from the c-Se films were significantly decreased by Cl termination of the dangling bonds, experimentally confirming the results of the simulations.

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