Chlorine Radical Doping of a Few Layer Graphene with Low Damage

Abstract

We present a graphene plasma doping method using chlorine radicals generated in an inductively coupled plasma (ICP) with a double mesh grid system. Raman spectroscopy and sheet resistance measurement showed that this doping method is non-destructive and controllable approach for the p-type graphene layer doping method. And, by using a chlorine trap-doping method, the sheet resistance could be decreased to 76% at an optimized condition for the tri-layer graphene.