Abstract
Gallium nitride (GaN) layers on sapphire substrates have been grown by hydride-chloride vaporphase epitaxy (HVPE) at a Ga-source temperature reduced from 890°C (standard value) to 600°C. All epilayers are transparent and have smooth surfaces. The structural quality of layers was evaluated by measuring the X-ray rocking curve width (FWHM) using a triple-crystal X-ray diffractometer. For the best samples, this quantity amounted to 8 arc min. Analysis of the dependence of the crystal structure quality and photoluminescent properties of GaN layers on the Ga-source temperature showed that a decrease in this parameter to 600°C did not significantly affect the HVPE growth of GaN despite a considerable change in the vapor phase composition (ratio of GaCl and GaCl3 concentrations).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
