Abstract
The structure and luminescent properties of gallium nitride (GaN) epilayers grown by hydride-chloride vapor-phase epitaxy (HVPE) in a hydrogen or argon atmosphere on 2-inch Si(111) substrates with AlN buffer layers have been studied. The replacement of hydrogen atmosphere by argon for the HVPE growth of GaN leads to a decrease in the epilayer surface roughness. The ratio of intensities of the donor-acceptor and exciton bands in the luminescence spectrum decreases with decreasing growth temperature. For the best samples of GaN epilayers, the halfwidth (FWHM) of the X-ray rocking curve for the (0002) reflection was 420 sec of arc, and the FWHM of the band of exciton emission at 77 K was 48 meV.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
