Abstract
The structure and luminescent properties of gallium nitride (GaN) epilayers grown by hydride-chloride vapor-phase epitaxy (HVPE) in a hydrogen or argon atmosphere on 2-inch Si(111) substrates with AlN buffer layers have been studied. The replacement of hydrogen atmosphere by argon for the HVPE growth of GaN leads to a decrease in the epilayer surface roughness. The ratio of intensities of the donor-acceptor and exciton bands in the luminescence spectrum decreases with decreasing growth temperature. For the best samples of GaN epilayers, the halfwidth (FWHM) of the X-ray rocking curve for the (0002) reflection was 420 sec of arc, and the FWHM of the band of exciton emission at 77 K was 48 meV.
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