Abstract
Synthesis of an innovative material for temperature sensor based on carbon nano-fibers (CNFs) on p-Si substrates has been demonstrated. The CNF films were characterized by SEM, Raman and FTIR studies. First order Raman spectra indicated a G band at ∼1597 cm−1 corresponding to the E2g tangential stretching mode of an ordered graphitic structure with sp2 hybridization and a D band located ∼1350 cm−1 originated from disordered carbon. Gold fingers were deposited on the p-Si/CNF surface for resistance measurement. Temperature sensing properties were also investigated critically. Resistance changes with temperature (ΔR/R) in p-Si/CNF films are found to be significantly large 30–60% Very stable, reproducible and improved temperature sensing properties would make this material superior to commonly available temperature sensors.
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