Chirped Superlattices as Adjustable Strain Platforms for Metamorphic Semiconductor Devices

Abstract

Chirped superlattices are of interest as buffer layers in metamorphic semiconductor device structures, because they can combine the mismatch accommodating properties of compositionally-graded layers with the dislocation filtering properties of superlattices. Important practical aspects of the chirped superlattice as a buffer layer are the surface strain and surface in-plane lattice constant. In this work two basic types of InGaAs/GaAs chirped superlattice buffers have been studied. In design I (composition modulated), the average composition is varied by modulating the composition of one of the two layers in the superlattice period, but the individual layer thicknesses were fixed. In design II (thickness modulated), the individual layer thicknesses were modulated, but the compositions were fixed. In this paper the surface strain and surface in-plane lattice constant for these chirped superlattices are presented as functions of the top composition and period for each of these basic designs.