Abstract
Front side etching combined with sample tilting – instead of wafer through etching – allows for transmission electron microscopy (TEM) investigations on nanostructures integrated in microelectromechanical systems (MEMS). We present electron diffraction of an individual single-walled carbon nanotube (SWNT) suspended between sharp polycrystalline silicon tips as far as 165 μm away from the MEMS chip edge. This novel approach for transmission-beam characterization avoids complex wafer backside processing and facilitates alignment of the SWNTs to the focal plane using tips defined directly by photolithographic means. The demonstration of chirality assignment to the integrated SWNT paves the way for correlating experimentally measured response of the SWNT sensing element upon stimuli with the response predicted by theory.
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