Chiral-Structure-Driven Split Fermi Surface Properties in TaSi2, NbSi2, and VSi2

Abstract

We carried out de Haas–van Alphen (dHvA) experiments for TaSi2, NbSi2, and VSi2 with the hexagonal chiral structure, and compared them with the results of energy band calculations. The Fermi surface is found to be split into two different Fermi surfaces, reflecting the non-centrosymmetric crystal structure. A magnitude of the antisymmetric spin–orbit interaction or a splitting energy between the two Fermi surfaces is determined to be 493 K for dHvA branch α (α′) and 564 K for branch β (β′), where these dHvA branches correspond to main Fermi surfaces. The present splitting values are compared with 209 and 244 K in NbSi2, and 19 and 39 K in VSi2, respectively. The splitting energy is found to be larger in the Ta-5d conduction electrons than those with the Nb-4d and V-3d conduction electrons.