Abstract

Controlling chiral magnetic domains in a multiferroic material is promising for applications in spintronics or data storage devices. The authors study the electric-field driven relaxation of multiferroic domains in NaFeGe${}_{2}$O${}_{6}$ as a function of temperature and electric field over several decades in time. An astonishingly simple combination of an Arrhenius-like temperature dependence with a Merz law for the electric-field dependence describes the relaxation times with only two parameters, indicating that multiferroic relaxation is essentially determined by domain-wall motion.

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