Abstract
Casimir interaction of two SiO2 glass half spaces being substrates for Chern-Simons boundary layers is studied. The separation between two half spaces at which the Casimir energy minimum occurs is strongly increased for dielectric SiO2 glass substrates in comparison with previously considered metal Au and semiconductor Si substrates. Strong reduction in the Casimir force due to presence of Chern-Simons layers is found for SiO2 glass substrate. Influence of modification of the infrared absorption on the Casimir force is studied.
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